Datasheet4U Logo Datasheet4U.com

MJD253 - Silicon PNP Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – MJD253

Datasheet Details

Part number MJD253
Manufacturer Inchange Semiconductor
File Size 243.96 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJD253 Datasheet
Additional preview pages of the MJD253 datasheet.

Product details

Description

High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A Complement to the NPN MJD243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VE

📁 Similar Datasheet

  • MJD253 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • MJD253 - Complementary Silicon Plastic Power Transistor (ON)
  • MJD20 - P-channel power MOSFET (Sanken)
  • MJD200 - NPN Transistor (INCHANGE)
  • MJD200 - Complementary Plastic Power Transistors (ON)
  • MJD200 - D-PAK (Fairchild)
  • MJD200 - SILICON POWER TRANSISTORS (Motorola)
  • MJD210 - PNP Transistor (Fairchild)
Other Datasheets by Inchange Semiconductor
  • MJD210 - Silicon PNP Power Transistor
  • MJD243 - Silicon NPN Power Transistor
  • MJD2955 - Silicon PNP Power Transistor
  • MJD112 - Silicon NPN Power Transistor
  • MJD117 - Silicon PNP Power Transistor
  • MJD122 - Silicon NPN Darlington Power Transistor
Published: |