| Part Number | MJD253 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust devi. isc Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD253 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -100 V VCE(sa. |
MJD253 Datasheet and Specifications PDF
The MJD253 is a Silicon PNP Power Transistor.
| Part Number | MJD253 Datasheet |
|---|---|
| Description | Complementary Silicon Plastic Power Transistor |
| Manufacturer | onsemi |
| Overview |
MJD243 (NPN), MJD253 (PNP)
Preferred Device
Complementary Silicon Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier applica.
4.0 A, 100 V, 12.5 W POWER TRANSISTOR
4 4 Base 1 Collector 2 Emitter 3 DPAK *3 CASE 369D STYLE 1 1 2 3 DPAK *3 CASE 369C STYLE 1 * Collector *Emitter Sustaining Voltage * * VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain * hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC. |