MJD253 Overview
Description
High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A - Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A - Complement to the NPN MJD243 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low voltage, low -power ,high-gain audio amplifier applications. SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.4 W 12.5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c 10 ℃/W Rth j-a MJD253 isc Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD253 TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A ;IB= -0.2A -1.8 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -0.5A; VCE= -1V VCB= -100V; IE= 0 VCB= -100V; IE= 0;TC= 125℃ VEB= -7V; IC= 0 -1.5 V -0.1 μA -0.1 mA -0.1 μA hFE-1 DC Current Gain IC= -0.2 A ; VCE= -1V 40 180 hFE-2 DC Current Gain IC= -1A ; VCE= -1V 15 fT Current-Gain-Bandwidth Product IC= -0.1 A; VCE= -10V; ftest = 10MHz 40 MHz COB Collector Capacitance IE= 0; VCB= -10V; ft.
