MJD44E3 - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	MJD44E3
Manufacturer	Inchange Semiconductor
File Size	265.30 KB
Description	Silicon NPN Power Transistor
Datasheet	MJD44E3 Datasheet
Additional preview pages of the MJD44E3 datasheet.

Product details

Description

High DC Current Gain : hFE = 1000(Min)@ IC= 5A Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Collector Pow

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Published: Sep 14, 2022 |