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MJD44E3 Datasheet

The MJD44E3 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJD44E3
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable opera. L PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-EmitterSaturation Voltage VCE(sat)-2 Collector-EmitterSaturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain CONDITIONS IC=.
Part NumberMJD44E3
DescriptionNPN DARLINGTON SILICON POWER TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44E3/D MJD44E3* Darlington Power Transistor DPAK For Surface Mount Application • • • • • • • . . . for general purpose power and swit. ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ Î.
Part NumberMJD44E3
DescriptionDarlington Power Transistor
Manufactureronsemi
Overview MJD44E3, NJVMJD44E3T4G Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver stages in applications such as switching regu.
* Electrically Similar to Popular D44E3 Device
* High DC Gain − 1000 Min @ 5.0 Adc
* Low Sat. Voltage − 1.5 V @ 5.0 Adc
* Compatible With Existing Automatic Pick and Place Equipment
* Epoxy Meets UL 94 V−0 @ 0.125 in
* ESD Ratings:  Human Body Model, 3B > 8000 V  Machine Model, C > 400 V
* NJV Pre.

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