MJD44E3
Overview
High DC Current Gain : hFE = 1000(Min)@ IC= 5A Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | MJD44E3 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 265.30 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD44E3T4 | Motorola Semiconductor | NPN DARLINGTON SILICON POWER TRANSISTOR |
| MJD44E3 | Motorola Semiconductor | NPN DARLINGTON SILICON POWER TRANSISTOR |
| MJD44E3 | onsemi | Darlington Power Transistor |
| MJD44H11 | Kexin Semiconductor | Complementary Power Transistors |
| MJD44H11 | Motorola Semiconductor | SILICON POWER TRANSISTORS |