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MJD50 - Silicon NPN Power Transistor

General Description

DC Current Gain -hFE = 30~150@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output

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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 2.0 A IB Base Current Collector Power Dissipation TC=25℃ PD Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.6 A 15 W 1.