| Part number | MJD50 |
|---|---|
| Datasheet | MJD50-InchangeSemiconductor.pdf |
| File Size | 186.24 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJD50 | NPN Epitaxial Silicon Transistor | Fairchild |
 |
MJD50 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST Microelectronics |
 |
MJD50 | NPN SILICON POWER TRANSISTORS | Motorola |
 |
MJD50 | High Voltage Power Transistors | ON Semiconductor |
 |
MJD50 | NPN Epitaxial Silicon Transistor | Kexin |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJD5731 | Silicon PNP Power Transistor |
| MJD112 | Silicon NPN Power Transistor |
| MJD117 | Silicon PNP Power Transistor |
| MJD122 | Silicon NPN Darlington Power Transistor |
| MJD127 | Silicon PNP Darlington Power Transistor |
| MJD128 | Silicon PNP Darlington Power Transistor |
| MJD148 | Silicon NPN Power Transistor |
| MJD210 | Silicon PNP Power Transistor |
| MJD243 | Silicon NPN Power Transistor |
| MJD253 | Silicon PNP Power Transistor |
