Datasheet Details
| Part number | MJD5731 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.13 KB |
| Description | Silicon PNP Power Transistor |
| Download | MJD5731 Download (PDF) |
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| Part number | MJD5731 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.13 KB |
| Description | Silicon PNP Power Transistor |
| Download | MJD5731 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO VEBO IC ICM PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -350 V -5 V -1.0 A -3.0 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.33 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD5731 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJD5731 | High Voltage PNP Silicon Power Transistors | ON |
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