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MJD5731 - Silicon PNP Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switchi

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO VEBO IC ICM PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -350 V -5 V -1.0 A -3.0 A 15 W 1.
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