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MJD6039 - Silicon NPN Power Transistor

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) High DC Current Gain- : hFE = 500(Min)@IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSO

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dssipation TC=25℃ PC Collector Power Dissipation Ta=25℃ TJ Junction Temperature 0.1 A 20 W 1.
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