Datasheet Details
| Part number | MJD6039 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD6039-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | MJD6039 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD6039-InchangeSemiconductor.pdf |
|
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dssipation TC=25℃ PC Collector Power Dissipation Ta=25℃ TJ Junction Temperature 0.1 A 20 W 1.75 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD6039 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2 A ;IB= 8mA VBE(on) Base-Emitter On Voltage IC= 2A ;VCE= 4V ICBO Collector Cutoff Current VCB= 80V;
IE= 0 ICEO Collector Cutoff Current VCE= 40V;
Compare MJD6039 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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