MJD6039
MJD6039 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
- High DC Current Gain-
: h FE = 500(Min)@IC= 2A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dssipation
TC=25℃
Collector Power Dissipation
Ta=25℃
Junction Temperature
20...
