MJD6039 Datasheet and Specifications PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD6036/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • • • • Designed for general purpose powe.

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·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT.

stered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2 A ;IB= 8mA VBE(on) Base-Em.

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switc.

* Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
* Straight Lead Version in Plastic Sleeves (“
*1” Suffix)
* Monolithic Construction With Built
*in Base
*Emitter Shunt Resistors
* High DC Current Gain
* hFE = 2500 (Typ) @ IC = 4.0 Adc
* Epoxy Meets UL 94 V
*0 @ 0.125 in
* ESD .