MJE340
MJE340 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
- DC Current Gain-
: h FE = 100(Min) @ IC= 50m A
- Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50m A
- plement to the PNP MJE350
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 6.25 ℃/W
MJE340 isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
