Datasheet4U Logo Datasheet4U.com

MJE340 Datasheet

The MJE340 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJE340
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to the PN. STICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Volta.
Part NumberMJE340
DescriptionMedium Power NPN Transistors
ManufacturerMulticomp
Overview Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range The.
* NPN Plastic Medium Power Silicon Transistor.
* Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions A B C D E F G L M N P S Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical) 0.49 0.75 4.5 (Typical) 15.7 (Typical) 1.27 (Typical) 3.75 (Typical).
Part NumberMJE340
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview MJE340 MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epi. sat)[V], SATURATION VOLTAGE VCE = 2V 1.2 IC = 10IB 1.0 hFE, DC CURRENT GAIN 100 0.8 V BE(sat) 0.6 V CE(sat) 0.4 10 0.2 1 1 10 100 1000 0.0 10 100 1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emit.
Part NumberMJE340
Description0.5 AMPERE POWER TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE340/D Plastic Medium Power NPN Silicon Transistor . . . useful for high–voltage general purpose applications. • Suitable for Transfor. ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ.

Similar Datasheets

Part Number Manufacturer Description
MJE340G onsemi NPN Silicon Transistor
MJE340 STMicroelectronics COMPLEMETARY SILICON POWER TRANSISTORS
MJE340 Continental Device India NPN EPITAXIAL SILICON POWER TRANSISTOR
MJE340 onsemi Plastic Medium-Power NPN Silicon Transistor
MJE340 Central Semiconductor POWER TRANSITORS
MJE340T Inchange Semiconductor NPN Transistor
MJE340 NTE Electronics Silicon NPN Transistor