Datasheet Details
| Part number | MJE340T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.72 KB |
| Description | NPN Transistor |
| Datasheet | MJE340T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE340T.
| Part number | MJE340T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.72 KB |
| Description | NPN Transistor |
| Datasheet | MJE340T-INCHANGE.pdf |
|
|
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE340 | Silicon NPN Transistor | NTE |
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MJE340 | COMPLEMETARY SILICON POWER TRANSISTORS | ST Microelectronics |
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