Datasheet Details
| Part number | MJE341 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.64 KB |
| Description | NPN Transistor |
| Datasheet | MJE341-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE341.
| Part number | MJE341 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.64 KB |
| Description | NPN Transistor |
| Datasheet | MJE341-INCHANGE.pdf |
|
|
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 150 V(Min) ·DC Current Gain- : hFE = 20(Min) @ IC= 150mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium voltage and extended range amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 175 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 0.5 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.25 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA;
IB= 0 ICBO Collector Cutoff Current VCB= 175V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE341 | 0.5 AMPERE POWER TRANSISTORS | Motorola |
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MJE341 | POWER TRANSISTORS | ON |
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