MJE341 Datasheet and Specifications PDF

The MJE341 is a NPN Transistor.

Datasheet4U Logo
Part NumberMJE341 Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 150 V(Min) ·DC Current Gain- : hFE = 20(Min) @ IC= 150mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re. herwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 ICBO Collector Cutoff Current VCB= 175V; IE= 0 ICEO Collector Cutoff Current VCE= 150V; IB= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE -1 DC Current Gain IC= 10m A ; VC.
Part NumberMJE341 Datasheet
DescriptionPOWER TRANSISTORS
Manufactureronsemi
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE341/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ . ector
*Base Voltage Emitter
*Base Voltage Collector Current
* Continuous Base Current 500 250 mAdc mAdc Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 20 0.16 TJ, Tstg
* 65 to + 150 Plastic NPN Silicon Medium-Power Transistors MJE.
Part NumberMJE341 Datasheet
Description0.5 AMPERE POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE341/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ . ector
*Base Voltage Emitter
*Base Voltage Collector Current
* Continuous Base Current 500 250 mAdc mAdc Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 20 0.16 TJ, Tstg
* 65 to + 150 Plastic NPN Silicon Medium-Power Transistors MJE.