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MJE8501 - Silicon NPN Power Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is crit

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Part number MJE8501
Manufacturer Inchange Semiconductor
File Size 211.52 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor MJE8501 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1400 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2.
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