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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE8503A/D
Advance Information
MJE8503A*
*Motorola Preferred Device
SWITCHMODE™ Series
NPN Bipolar Power Transistor
The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Featuring • 1500 Volt Collector-Base Breakdown Capability • Fast Switching: 180 ns Typical Fall Times 450 ns Typical Crossover Times 1.2 µs Typical Storage Times • Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 VCES
POWER TRANSISTORS 5.
MJE8503A Datasheet
