Datasheet4U Logo Datasheet4U.com

MJL1302A - Silicon PNP Power Transistor

General Description

Low Harmonic Distortion High Safe Operation Area 1 A/100 V @ 1 sec High fT 30 MHz (TYP) Complement to Type MJL3281A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJL1302A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
MJL1302A PNP Power Transistor ON Semiconductor
MJL1302 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
MJL1302 COMPLEMENTARY SILICON POWER TRANSISTORS ON
MJL16218 POWER TRANSISTOR Motorola

Other Datasheets by Inchange Semiconductor

Part Number Description
MJL21194G Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor MJL1302A DESCRIPTION ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·High fT — 30 MHz (TYP) ·Complement to Type MJL3281A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Emitter Voltage-1.5V IC Collector Current-Continuous ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range isc Website：www.iscsemi.