MJL1302
MJL1302 is COMPLEMENTARY SILICON POWER TRANSISTORS manufactured by onsemi.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL3281A/D
Designer's plementary NPN-PNP Silicon Power Bipolar Transistor
The MJL3281A and MJL1302A are Power Base power transistors for high power audio, disk head positioners and other linear applications.
™ Data Sheet
MJL3281A- PNP MJL1302A-
- Motorola Preferred Device
- Designed for 100 W Audio Frequency
- Gain plementary:
- Gain Linearity from 100 m A to 7 A
- High Gain
- 60 to 175
- h FE = 45 (Min) @ IC = 8 A
- Low Harmonic Distortion
- High Safe Operation Area
- 1 A/100 V @ 1 Second
- High f T
- 30 MHz Typical
15 AMPERE PLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
CASE 340G- 02, STYLE 2 TO- 264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector- Emitter Voltage
- 1.5 V Collector Current
- Continuous Collector Current
- Peak (1) Base Current
- Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 200 200 7 200 15 25 1.5 200 1.43
- 65 to +150
āā
Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector- Emitter Sustaining Voltage (IC = 100 m Adc, IB = 0) Emitter- Base Voltage (IE = 100 m Adc, IC = 0) (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. VCEO(sus) 200 VEBO 7
- - (continued)
- - Vdc Vdc Symbol Min Typ Max Unit
Designer’s Data for “Worst Case” Conditions
- The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves
- representing boundaries on device characteristics...
