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MMBR951L

Manufacturer: Inchange Semiconductor

MMBR951L datasheet by Inchange Semiconductor.

MMBR951L datasheet preview

MMBR951L Datasheet Details

Part number MMBR951L
Datasheet MMBR951L-InchangeSemiconductor.pdf
File Size 170.33 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN RF Transistor
MMBR951L page 2 MMBR951L page 3

MMBR951L Overview

·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 10 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA.

MMBR951LT1 from other manufacturers

View MMBR951LT1 datasheet index

Brand Logo Part Number Description Other Manufacturers
Motorola Logo MMBR951LT1 NPN Silicon Low Noise / High-Frequency Transistors Motorola
Motorola Logo MMBR951ALT1 NPN Silicon Low Noise / High-Frequency Transistors Motorola
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