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MMBR951L Datasheet Silicon NPN Rf Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product.

General Description

·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 V 100 mA 0.322 W 150 ℃ -55~150 ℃ isc website:.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR951L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ;

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