MMBR951ALT1 Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR951ALT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small signal amplifiers.
MMBR951ALT1 Key Features
- Fully Implanted Base and Emitter Structure
- 18 Finger, 1.25 Micron Geometry with Gold Top Metal
- Gold Sintered Back Metal
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel
- 55 to +150 330 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W
- 0.1 0.1 Vdc Vdc µAdc µAdc
- 200 150
- DYNAMIC CHARACTERISTICS
- 8.0 9.0
- 0.45 1.0 pF GHz