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MMBR951ALT1 - NPN Silicon Low Noise / High-Frequency Transistors

Key Features

  • excellent broadband linearity and is offered in a variety of packages.
  • Fully Implanted Base and Emitter Structure.
  • 18 Finger, 1.25 Micron Geometry with Gold Top Metal.
  • Gold Sintered Back Metal.
  • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR951 MRF957 MRF9511 SERIES IC = 100 mA LOW NOISE HIGH.

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR951ALT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR951 MRF957 MRF9511 SERIES IC = 100 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR951LT1, MMBR951ALT1 CASE 419–02, STYLE 3 MRF957T1 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9511LT1 REV 9 MOTOROLA RF DEVICE DATA © Motorola, Inc.