PMD1701K Overview
IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A;.
Silicon PNP Darlingtion Power Transistor
| Part number | PMD1701K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 111.67 KB |
| Description | Silicon PNP Darlingtion Power Transistor |
| Datasheet | PMD1701K_InchangeSemiconductor.pdf |
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IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| PMD1701K | COMPLEMENTARY POWER DARLINGTON TRANSISTORS | Central Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| PMD1702K | Silicon PNP Darlingtion Power Transistor |
| PMD1703K | Silicon PNP Darlingtion Power Transistor |
| PMD1601K | Silicon NPN Darlingtion Power Transistor |
| PMD1602K | Silicon NPN Darlingtion Power Transistor |
| PMD1603K | Silicon NPN Darlingtion Power Transistor |