PMD1701K Description
IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A;.
PMD1701K is Silicon PNP Darlingtion Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| PMD1701K | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A;.