PMD1701K Datasheet
PMD1701K Datasheet (Central Semiconductor)
Central Semiconductor
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PMD1701K Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= -60V(Min) ·Complement to type PMD1601K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching application.
r Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1701K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collecto.