Inchange Semiconductor 2P4M
Thyristor
APPLICATIONS
●Highly sensitive triggering levels●For capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies applications.
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current 180°conduction angle ITSM Non-repetitive surge peak on-state current t= 20ms PG(AV) Average gate power dissipation Tj = 125℃ Tj Junction temperature Tstg Storage temperature MIN 400 400 4 20 0.2 125 -40 to + 150 UNIT V V A A W ℃ELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, RGK=1kΩ VRM=VRRM, RGK=1kΩ,Tj=125℃ IDRM Repetitive peak off-state current VDM=VDRM, RGK=1kΩ VDM=VDRM,RGK=1kΩ,Tj=125℃ VTM On-state voltage ITM= 4A IGT Gate-trigger current VDM=12V;RL=140Ω VGT Gate-trigger voltage VDM=...