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2P4M Datasheet PDF

Thinki Semiconductor 2P4M

2.0 Ampere Passivated Process Thyristor

Part No. 2P4M
Datasheet 2P4M Download
Manufacturer
Thinki Semiconductor
Description 2.0 Ampere Passivated Process Thyristor
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2P4M datasheet page 1 preview

DESCRIPTION

: ThinkiSemi 2P4M SCR with the parallel resistor between Gate and Cathode are especially recommended for use on straight hair, igniter, anion generator etc.. MAIN

FEATURES

TO-202 Pkg Outline Symbol Value IT(RMS) IGT VTM 2 ≤200 ≤1.5

ABSOLUTE MAXIMUM RATINGS

Unit A μA V Internal structure A(2) K(1) RGK G(3) 3 2 1 Parameter Storage junction temperature range Operating junction temperature range Repetitive peak off-state voltage Repetitive peak reverse voltage Symbol Tstg Tj VDRM VRRM Value -40-150 -40-110 600 600 Unit ℃ ℃ V V RMS on-state current @ (TC=72℃) IT(RMS) 2 A Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current Peak gate current (tp=20μs, Tj=110℃) Peak gate power (tp=20μs, Tj=110℃) Average gate power dissipation(Tj=110℃) ITSM I2t dI/dt IGM PGM PG(AV) 2
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