Silicon Power Transistor
| Part number | 3DD301B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.55 KB |
| Description | Silicon Power Transistor |
| Datasheet | 3DD301B_Inchange.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV vertical output applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
3DD3010A1 | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD3015A1 | Silicon NPN Transistor | Huajing Microelectronics |
|
3DD3015A1-H | Silicon NPN bipolar transistor | Huajing Microelectronics |
|
3DD3015A3 | Silicon NPN Transistor | Huajing Microelectronics |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD301C | Silicon Power Transistor |
| 3DD301D | Silicon Power Transistor |
| 3DD303A | Silicon Power Transistor |
| 3DD303B | Silicon Power Transistor |
| 3DD303C | Silicon Power Transistor |
| 3DD3997 | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
