3DD301B is Silicon Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Huajing Microelectronics |
3DD3010A1 | Silicon NPN Transistor |
|
Huajing Microelectronics |
3DD3015A1 | Silicon NPN Transistor |
|
Huajing Microelectronics |
3DD3015A1-H | Silicon NPN bipolar transistor |
|
Huajing Microelectronics |
3DD3015A3 | Silicon NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV vertical output applications.
