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Inchange Semiconductor
3DD301C
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) - Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W 3DD301C isc website:.iscsemi.cn...