Inchange Semiconductor 3DD301C
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3DD301C |
|---|---|
| Datasheet | 3DD301C Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)●Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W 3DD301C isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC=...