Datasheet Details
| Part number | BFQ591 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.07 KB |
| Description | Silicon RF Transistor |
| Datasheet | BFQ591_Inchange.pdf |
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Overview: isc Silicon NPN RF Transistor.
| Part number | BFQ591 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.07 KB |
| Description | Silicon RF Transistor |
| Datasheet | BFQ591_Inchange.pdf |
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·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF munications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 200 mA 2.25 W 175 ℃ Tstg Storage Temperature Range -65~150 ℃ BFQ591 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFQ591 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BFQ591 | NPN 7 GHz wideband transistor | Philips |
| Part Number | Description |
|---|---|
| BFQ540 | NPN Transistor |