BFQ591 - Silicon RF Transistor

Inchange Semiconductor

General Description

High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

communications subscribers equipment.

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Datasheet Details

Part number	BFQ591
Manufacturer	Inchange Semiconductor
File Size	213.07 KB
Description	Silicon RF Transistor
Datasheet	BFQ591 Datasheet

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isc Silicon NPN RF Transistor DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 200 mA 2.25 W 175 ℃ Tstg Storage Temperature Range -65~150 ℃ BFQ591 isc website：www.iscsemi.