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BFQ591 - NPN 7 GHz wideband transistor

General Description

Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment.

DESCRIPTION NPN wideband transistor in a SOT89 plastic package.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ591 NPN 7 GHz wideband transistor Product specification Supersedes data of 2002 Jan 07 2002 Feb 04 Philips Semiconductors NPN 7 GHz wideband transistor Product specification BFQ591 FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. PINNING PIN 1 2 3 emitter collector base DESCRIPTION APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. handbook, halfpage DESCRIPTION NPN wideband transistor in a SOT89 plastic package. MARKING TYPE NUMBER BFQ591 MARKING CODE BCp 1 23 Bottom view MBK514 Fig.1 Simplified outline (SOT89).