BFS67 - Silicon RF Transistor

Inchange Semiconductor

General Description

NF = 4.5 dB TYP.

High Current-Gain

fT= 1 GHz TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For a wide range of

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Datasheet Details

Part number	BFS67
Manufacturer	Inchange Semiconductor
File Size	202.22 KB
Description	Silicon RF Transistor
Datasheet	BFS67 Datasheet

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·High Current-Gain—Bandwidth Product fT= 1 GHz TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For a wide range of RF applications such as: mixers and oscillators in TV tuners and RF communications equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 25 mA ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.