Datasheet Details
| Part number | BFS520 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.95 KB |
| Description | NPN Transistor |
| Datasheet | BFS520-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520.
| Part number | BFS520 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.95 KB |
| Description | NPN Transistor |
| Datasheet | BFS520-INCHANGE.pdf |
|
|
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·Low Noise and High Gain NF = 1.5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 150 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor BFS520 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V;
IE= 0 IEBO Emitter Cutoff Current VEB= 1V;
IC= 0 hFE DC Current Gain IC= 20mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BFS520 | NPN 9 GHz wideband transistor | NXP |
| Part Number | Description |
|---|---|
| BFS67 | Silicon RF Transistor |