BFS520 Datasheet
BFS520 Datasheet (NXP Semiconductors)
NXP Semiconductors
NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. P.
* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures excellent reliability
* SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, page.
BFS520 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Noise and High Gain NF = 1.5 dB TYP @VCE = 6V, IC = 5 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust.
BO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 6V
fT
Current-Gain
*Bandwidth Product IC= 20mA ; VCE= 6V
Cre
Feed-Back Capacitance
IE= 0 ; VCB= 6V;f= 1.0MHz
︱S21e︱2 Insertion Power Gain
IC= 20mA ; VCE= 6V;f= 1.0GHz
NF
Noise Figure
IC= 5mA ; VCE= 6V;f= 1.0GH.