NXP Semiconductors BFS520
NPN 9 GHz wideband transistor
| Part No. | BFS520 |
|---|---|
| Datasheet | BFS520 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 9 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability
● SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
Code: N2 Top view 1 BFS520 handbook, 2 columns 3 2 MBC870 Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 °C IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − − − TYP. − − − − 120 9 15 1.1 MAX.
