2SA1209 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·High Switching Speed ·plement to Type 2SC2911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL...