Datasheet4U Logo Datasheet4U.com

2SA1209 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET process.
  • High breakdown voltage.
  • Good linearity of hFE and small Cob.
  • Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dis.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1209 SILICON POWER TRANSISTOR SavantIC
2SA1209 POWER TRANSISTOR Inchange Semiconductor
2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR Toshiba Semiconductor
2SA1200 PNP Transistors Kexin
2SA1201 Silicon PNP Transistor Toshiba Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA1207 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1249 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 12 3 2.4 4.