2SA1302 Description
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;.
2SA1302 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SA1302 | Silicon PNP Transistor |
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;.