2SB857 Description
IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·plement to Type 2SD1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB857 TC=25℃ unless otherwise specified SYMBOL PARAMETER...