2SC3996 Description
·High Switching Speed ·High Breakdown Voltage : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3996 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.