2SC3996
Features
- High speed (tf=100ns typ).
- High reliability (adoption of HVP process).
- High breakdown voltage (VCBO=1500V).
- Adoption of MBIT process.
Package Dimensions unit:mm 2048B
[2SC3996]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
DC Current Gain
Storage Time Fall Time
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) h FE1 h FE2 tstg tf
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100m A, IB=0 VEB=4V, IC=0 IC=12A, IB=3.0A IC=12A, IB=3.0A VCE=5V, IC=1.0A VCE=5V, IC=12A IC=8A, IB1=1.6A, IB2=- 3.2A...
