2SC6017 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 250mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 250mA V(BR)CEO Collector-Emitter Voltage Breakdown IC= 1mA;.