D1912 Description
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1912 TYP.