KSD5076 Description
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5076
- Manufacturer: Inchange Semiconductor (official site)
- Size: 129.95 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
NJS |
KSD5076 | Silicon NPN Power Transistor |