Part KTD1414
Description Silicon NPN Power Transistors
Category Transistor
Manufacturer Inchange Semiconductor
Size 212.80 KB
Inchange Semiconductor
KTD1414

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation.