MJ10012T Description
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJ10012T Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10A;.