MJE350 Description
·Collector Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage-.
MJE350 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Multicomp |
MJE350 | Medium Power PNP Transistors |
Motorola Semiconductor |
MJE350 | 0.5 AMPERE POWER TRANSISTOR |
Fairchild |
MJE350 | PNP Epitaxial Silicon Transistor |
STMicroelectronics |
MJE350 | COMPLEMETARY SILICON POWER TRANSISTORS |
| MJE350 | POWER TRANSISTOR |
·Collector Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage-.