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BAR80 - Silicon RF Switching Diode

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Part number BAR80
Manufacturer Infineon Technologies AG
File Size 42.16 KB
Description Silicon RF Switching Diode
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BAR80 Silicon RF Switching Diode  Design for use in shunt configuration  High shunt signal isolation  Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking AAs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 35 100 150 -55 ... 125 -55 ... 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-17-2001 BAR80 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min.
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