BAR80
BAR80 is Silicon RF Switching Diode manufactured by Infineon.
Silicon RF Switching Diode
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking AAs 1=C
Pin Configuration 2=A 3=C 4=A
Package MW-4
Symbol VR IF Tj Top Tstg
Value 35 100 150 -55 ... 125 -55 ... 150
Unit V m A °C
Operating temperature range Storage temperature
Aug-17-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 m A AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 m A, f = 100 MHz Series inductance chip to ground Application information
Shunt signal isolation Shunt insertion loss IF = 10 m A, f = 2 GHz, RG=RL =50 VR = 5 V, f = 2 GHz, RG=RL =50 SI IL
Unit max. 20 1 n A V typ.
- IR VF
CT 0.6 rf Ls 1 0.92 0.5 0.14 1.6 1.3 0.7
- p F
n H
- 23 0.15
- d B
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
Aug-17-2001
Forward current IF = f (TS )
160 m A
0 0
120...
