BAR80 Description
Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol min. 0.92 1 0.92 0.5 0.14 max.
BAR80 Key Features
- Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insert