BAR80 Datasheet | Siemens Semiconductor Group

BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55...+125 -55...+150 Unit V m A °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Edition A02, 27.02.95 BAR 80 Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Reverse current VR = 20 V Forward voltage IF = 100 m A Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol min. Value typ. 0.92 1 0.92 0.5 0.14 max. Unit n A V p F 0.6 1.6 1.3 Ω 0.7 n H - CT f = 100MHz rf Ls IF = 5 m A Series inductance to ground Application information Shunt signal isolation 23 0.15 - d B d B - IF = 10 m A, f = 2 GHz, RG = RL = 50 Ω Shunt insertion loss VR = 5 V, f = 2 GHz, RG = RL = 50 Ω Configuration of the shunt-diode -A perfect ground is essential for optimum isolation -The anode pins should be used as passage for RF Semiconductor Group Edition A02, 27.02.95 BAR 80 Forward current IF = f (TS,TA) Forward resistance rf = (IF) f = 100 MHz m...