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BAR 80
l l l
Silicon RF Switching Diode
Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss
Type BAR 80
Marking AAs
Ordering code (tape and reel) Q62702-A1084
Pin configuration 1 2 3 C A C
Package 4 A MW-4
1)
Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55...+125 -55...+150 Unit V mA °C °C
VR IF Top Tstg
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A02, 27.02.95
BAR 80
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance
Symbol min.
Value typ. 0.92 1 0.
BAR80 Datasheet
