BAT14-03W Datasheet | Infineon

BAT15-03W Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Feature list - Low inductance LS = 1.8 nH (typical) - Low capacitance C = 0.28 pF (typical) at 1 MHz - Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) - Pb-free, RoHS pliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of...