| Part Number | BAT14-03W Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Or. apacitance CT 0.35 pF Ω - VR = 0 , f = 1 MHz Differential forward resistance RF IF 10mA/ 50 mA Diode capacitance CT = f (VR) f = 1MHz 0.50 pF CT 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Semiconductor Group 2 Mar-01-1996 BAT 14-03W Forw. |
BAT14-03W Datasheet and Specifications PDF
The BAT14-03W is a Silicon Schottky Diode.
| Part Number | BAT14-03W Datasheet |
|---|---|
| Description | Single silicon RF Schottky diode |
| Manufacturer | Infineon |
| Overview |
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction c.
list
* Low inductance LS = 1.8 nH (typical) * Low capacitance C = 0.28 pF (typical) at 1 MHz * Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) * Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2. |
| Part Number | BAT14-03W Datasheet |
|---|---|
| Description | Silicon Schottky Diode |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon Schottky Diode BAT14-03W Diodes Features DBS mixer application to 12GHz Medium barrier type Low capacitance SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1.. DBS mixer application to 12GHz Medium barrier type Low capacitance SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.05 0.1 -0.02 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage VR 4 V F. |