BAT15-099R
description
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
Feature list
- Low inductance LS = 2 n H (typical)
- Low capacitance C = 0.29 p F (typical)
- Industry standard SOT143 (2.9 mm x 2.4 mm x 1 mm)
- Pb-free, Ro HS pliant and halogen free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
For mixers in:
- Satellite systems
- Low noise blocks for Ku bands
- Security systems
Device information
Table 1
Part information
Product name / Ordering code BAT15-099R / BAT15099RE6327HTSA1
Package SOT143
Pin configuration Cross-over ring
Marking Pieces / Reel
S6s
3k
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
.infineon.
Please read the Important Notice and Warnings at the end of this document v1.0...
